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MIXA61H1200ED IGBT Transistor

The MIXA61H1200ED is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIXA61H1200ED transistor as follows.

Circuit diagram symbol of the MIXA61H1200ED transistor

MIXA61H1200ED Transistor Specification

Transistor Code MIXA61H1200ED
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package APPLICATION
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 60A

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