MIXA60WB1200TEH IGBT Transistor

The MIXA60WB1200TEH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIXA60WB1200TEH transistor as follows.

MIXA60WB1200TEH Transistor Specification

Transistor Code		MIXA60WB1200TEH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		APPLICATION
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	85A

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