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MIXA10WB1200TML IGBT Transistor

The MIXA10WB1200TML is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIXA10WB1200TML transistor as follows.

Circuit diagram symbol of the MIXA10WB1200TML transistor

MIXA10WB1200TML Transistor Specification

Transistor Code MIXA10WB1200TML
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package E1-PACK
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 17A

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