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Home » Electronics » IGBT » MIXA10WB1200TMH Transistor

MIXA10WB1200TMH IGBT Transistor

The MIXA10WB1200TMH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIXA10WB1200TMH transistor as follows.

Circuit diagram symbol of the MIXA10WB1200TMH transistor

MIXA10WB1200TMH Transistor Specification

Transistor Code MIXA10WB1200TMH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 12A

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