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Home » Electronics » IGBT » MIXA10WB1200TED Transistor

MIXA10WB1200TED IGBT Transistor

The MIXA10WB1200TED is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIXA10WB1200TED transistor as follows.

Circuit diagram symbol of the MIXA10WB1200TED transistor

MIXA10WB1200TED Transistor Specification

Transistor Code MIXA10WB1200TED
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package E2PACK
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 12A

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