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Home » Electronics » IGBT » MIXA101W1200EH Transistor

MIXA101W1200EH IGBT Transistor

The MIXA101W1200EH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIXA101W1200EH transistor as follows.

Circuit diagram symbol of the MIXA101W1200EH transistor

MIXA101W1200EH Transistor Specification

Transistor Code MIXA101W1200EH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package APPLICATION
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 108A

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