MITB10WB1200TMH IGBT Transistor

The MITB10WB1200TMH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MITB10WB1200TMH transistor as follows.

MITB10WB1200TMH Transistor Specification

Transistor Code		MITB10WB1200TMH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MINIPACK_2
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	17A

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