MITA10WB1200TMH IGBT Transistor

The MITA10WB1200TMH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MITA10WB1200TMH transistor as follows.

MITA10WB1200TMH Transistor Specification

Transistor Code		MITA10WB1200TMH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOLATED 30, 31, 32
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	17A

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