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Home » Electronics » IGBT » MIO1200-25E10 Transistor

MIO1200-25E10 IGBT Transistor

The MIO1200-25E10 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIO1200-25E10 transistor as follows.

Circuit diagram symbol of the MIO1200-25E10 transistor

MIO1200-25E10 Transistor Specification

Transistor Code MIO1200-25E10
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package E10
Collector-Emitter Voltage (Maximum) VCE 2500V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 1650A

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