The MIEB101H1200EH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the MIEB101H1200EH transistor as follows.
Transistor Code | MIEB101H1200EH | |
---|---|---|
Transistor Type | IGBT | |
IGBT Control Channel Type | N-Channel | |
Package | APPLICATION | |
Collector-Emitter Voltage (Maximum) | VCE | 1200V |
Collector-Emitter Saturation Voltage | VCE(on) | 1.8V |
Collector Current (Maximum) | IC | 183A |
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