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Home » Electronics » IGBT » MIEB100W1200TEH Transistor

MIEB100W1200TEH IGBT Transistor

The MIEB100W1200TEH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIEB100W1200TEH transistor as follows.

Circuit diagram symbol of the MIEB100W1200TEH transistor

MIEB100W1200TEH Transistor Specification

Transistor Code MIEB100W1200TEH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package APPLICATION
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 183A

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