MIEB100W1200TEH IGBT Transistor

The MIEB100W1200TEH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIEB100W1200TEH transistor as follows.

MIEB100W1200TEH Transistor Specification

Transistor Code		MIEB100W1200TEH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		APPLICATION
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	183A

UXPython is not the creator or an official representative of the MIEB100W1200TEH IGBT transistor. You can download the official MIEB100W1200TEH IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

HGTG40N60C3R IGBT Transistor IGC07T120T6L IGBT Transistor MGW12N120D IGBT Transistor RJH1CV6DPK IGBT Transistor NGTB50N60S1WG IGBT Transistor G20N60B3 IGBT Transistor AOT10B60D IGBT Transistor MIAA10WD600TMH IGBT Transistor STGFW30V60F IGBT Transistor CT25ASJ-8 IGBT Transistor IHW30N120R2 IGBT Transistor APT50GT60SRG IGBT Transistor HGT1S12N60C3S IGBT Transistor MUBW25-12A7 IGBT Transistor IGW40N65H5A IGBT Transistor SGL60N90DG3 IGBT Transistor IXGT24N170A IGBT Transistor IXXH150N60C3 IGBT Transistor IRG4BC20UD-S IGBT Transistor IXYH40N90C3 IGBT Transistor