MIAA10WD600TMH IGBT Transistor

The MIAA10WD600TMH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIAA10WD600TMH transistor as follows.

MIAA10WD600TMH Transistor Specification

Transistor Code		MIAA10WD600TMH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MINIPACK_2
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	18A

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