MGY25N120D IGBT Transistor

The MGY25N120D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGY25N120D transistor as follows.

MGY25N120D Transistor Specification

Transistor Code		MGY25N120D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	212W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.24V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1859pF
Rise Time		91

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