MGY25N120 IGBT Transistor

The MGY25N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGY25N120 transistor as follows.

MGY25N120 Transistor Specification

Transistor Code		MGY25N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC

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