MGW30N60 IGBT Transistor

The MGW30N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGW30N60 transistor as follows.

MGW30N60 Transistor Specification

Transistor Code		MGW30N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	202W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		4280pF
Rise Time		76

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