MGW20N120 IGBT Transistor

The MGW20N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGW20N120 transistor as follows.

MGW20N120 Transistor Specification

Transistor Code		MGW20N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	174W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1860pF
Rise Time		88

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