MGW14N60ED IGBT Transistor

The MGW14N60ED is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGW14N60ED transistor as follows.

MGW14N60ED Transistor Specification

Transistor Code		MGW14N60ED
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	112W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	14A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		10000

UXPython is not the creator or an official representative of the MGW14N60ED IGBT transistor. You can download the official MGW14N60ED IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

100MT060WDF IGBT Transistor 10N40C1D IGBT Transistor 10N40E1D IGBT Transistor 10N40F1D IGBT Transistor 10N50C1D IGBT Transistor 10N50F1D IGBT Transistor 12N60C3D IGBT Transistor 14N36GVL IGBT Transistor 1MB03D-120 IGBT Transistor 1MB05-120 IGBT Transistor 1MB05D-120 IGBT Transistor 1MB08-120 IGBT Transistor 1MB08D-120 IGBT Transistor 1MB10-120 IGBT Transistor 1MB10D-120 IGBT Transistor 1MB15D-060 IGBT Transistor 1MB20-060 IGBT Transistor 1MB20D-060 IGBT Transistor 1MB30-060 IGBT Transistor 1MBC03-120 IGBT Transistor