MGW14N60ED IGBT Transistor

The MGW14N60ED is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGW14N60ED transistor as follows.

MGW14N60ED Transistor Specification

Transistor Code		MGW14N60ED
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	112W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	14A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		10000

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