MGW12N120 IGBT Transistor

The MGW12N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGW12N120 transistor as follows.

MGW12N120 Transistor Specification

Transistor Code		MGW12N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	123W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.51V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		930pF
Rise Time		74

UXPython is not the creator or an official representative of the MGW12N120 IGBT transistor. You can download the official MGW12N120 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

SMBL1G200US120 IGBT Transistor CPV363M4UPBF IGBT Transistor IXGH12N60CD1 IGBT Transistor HGTP10N50C1D IGBT Transistor NGTB30N60FWG IGBT Transistor T0800EB45G IGBT Transistor SMC7G20US120 IGBT Transistor IXGT31N60D1 IGBT Transistor IGC168T170S8RM IGBT Transistor KGF30N135NDH IGBT Transistor IXGH25N250 IGBT Transistor STGD10HF60KD IGBT Transistor IXYH30N120C3 IGBT Transistor STGPL6NC60DI IGBT Transistor IXBH9N160G IGBT Transistor IXYN100N65B3D1 IGBT Transistor VS-ENQ030L120S IGBT Transistor VS-GT300FD060N IGBT Transistor RJH1CV7DPK IGBT Transistor HYG75B120C1S IGBT Transistor