MGS05N60D IGBT Transistor

The MGS05N60D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGS05N60D transistor as follows.

MGS05N60D Transistor Specification

Transistor Code		MGS05N60D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO226AE
Collector Power Dissipation (Maximum)	Pc	1W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	15V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		75pF
Rise Time		28

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