MGP7N60ED IGBT Transistor

The MGP7N60ED is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGP7N60ED transistor as follows.

MGP7N60ED Transistor Specification

Transistor Code		MGP7N60ED
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	81W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		10000

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