MGP11N60E IGBT Transistor

The MGP11N60E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGP11N60E transistor as follows.

MGP11N60E Transistor Specification

Transistor Code		MGP11N60E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	96W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	11A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		779pF
Rise Time		46

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