MGB15N35CLT4 IGBT Transistor

The MGB15N35CLT4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGB15N35CLT4 transistor as follows.

MGB15N35CLT4 Transistor Specification

Transistor Code		MGB15N35CLT4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK
Collector Power Dissipation (Maximum)	Pc	136W
Collector-Emitter Voltage (Maximum)	VCE	380V
Gate-Emitter Voltage (Maximum)	VGE	22V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		1000pF
Rise Time		13000

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