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MGB15N35CLT4 IGBT Transistor

The MGB15N35CLT4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGB15N35CLT4 transistor as follows.

Circuit diagram symbol of the MGB15N35CLT4 transistor

MGB15N35CLT4 Transistor Specification

Transistor Code MGB15N35CLT4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package D2PAK
Collector Power Dissipation (Maximum) Pc 136W
Collector-Emitter Voltage (Maximum) VCE 380V
Gate-Emitter Voltage (Maximum) VGE 22V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 1000pF
Rise Time 13000

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