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MDI200-12A4 IGBT Transistor

The MDI200-12A4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MDI200-12A4 transistor as follows.

Circuit diagram symbol of the MDI200-12A4 transistor

MDI200-12A4 Transistor Specification

Transistor Code MDI200-12A4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package INT-A-PAK
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 150 oC

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