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Home » Electronics » IGBT » MDI100-12A3 Transistor

MDI100-12A3 IGBT Transistor

The MDI100-12A3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MDI100-12A3 transistor as follows.

Circuit diagram symbol of the MDI100-12A3 transistor

MDI100-12A3 Transistor Specification

Transistor Code MDI100-12A3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOLATED 1 7 6 3 2 F
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC

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