KP810V IGBT Transistor

The KP810V is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KP810V transistor as follows.

KP810V Transistor Specification

Transistor Code		KP810V
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO218
Collector Power Dissipation (Maximum)	Pc	50W
Collector-Emitter Voltage (Maximum)	VCE	1100V
Collector-Emitter Saturation Voltage	VCE(on)	5V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		200

UXPython is not the creator or an official representative of the KP810V IGBT transistor. You can download the official KP810V IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

SGF15N90D IGBT Transistor STGP19NC60H IGBT Transistor FGL60N100BNTD IGBT Transistor GT8J101 IGBT Transistor HGTG40N60C3R IGBT Transistor APTGT150A120D3 IGBT Transistor IKW30N65H5 IGBT Transistor HGT1S12N60C3D IGBT Transistor VS-GB200TH120U IGBT Transistor APT60GU30B IGBT Transistor IXBH20N360HV IGBT Transistor IXGA36N60A3 IGBT Transistor SGW13N60UFD IGBT Transistor IRGP35B60PD-E IGBT Transistor SM2G75US60 IGBT Transistor VS-GA100NA60UP IGBT Transistor HGT1S7N60A4DS IGBT Transistor GA200SA60U IGBT Transistor IFS100B12N3E4_B31 IGBT Transistor 10N50F1D IGBT Transistor