KGT25N135KDH IGBT Transistor

The KGT25N135KDH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGT25N135KDH transistor as follows.

KGT25N135KDH Transistor Specification

Transistor Code		KGT25N135KDH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	220W
Collector-Emitter Voltage (Maximum)	VCE	1350V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100
Rise Time		25

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