KGT15N60FDA IGBT Transistor

The KGT15N60FDA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGT15N60FDA transistor as follows.

KGT15N60FDA Transistor Specification

Transistor Code		KGT15N60FDA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220IS
Collector Power Dissipation (Maximum)	Pc	41.6W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		90pF
Rise Time		20

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