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KGT15N120NDH IGBT Transistor

The KGT15N120NDH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGT15N120NDH transistor as follows.

Circuit diagram symbol of the KGT15N120NDH transistor

KGT15N120NDH Transistor Specification

Transistor Code KGT15N120NDH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P(N)E
Collector Power Dissipation (Maximum) Pc 190W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.85V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 60pF
Rise Time 30

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