KGT15N120NDA IGBT Transistor

The KGT15N120NDA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGT15N120NDA transistor as follows.

KGT15N120NDA Transistor Specification

Transistor Code		KGT15N120NDA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P(N)E
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		80pF
Rise Time		30

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