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KGF50N60KDA IGBT Transistor

The KGF50N60KDA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGF50N60KDA transistor as follows.

Circuit diagram symbol of the KGF50N60KDA transistor

KGF50N60KDA Transistor Specification

Transistor Code KGF50N60KDA
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 227W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 250
Rise Time 45

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