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KGF40N60PA IGBT Transistor

The KGF40N60PA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGF40N60PA transistor as follows.

Circuit diagram symbol of the KGF40N60PA transistor

KGF40N60PA Transistor Specification

Transistor Code KGF40N60PA
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector Power Dissipation (Maximum) Pc 223W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 80A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 220
Rise Time 45

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