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KGF30N135NDH IGBT Transistor

The KGF30N135NDH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGF30N135NDH transistor as follows.

Circuit diagram symbol of the KGF30N135NDH transistor

KGF30N135NDH Transistor Specification

Transistor Code KGF30N135NDH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 278W
Collector-Emitter Voltage (Maximum) VCE 1350V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 120
Rise Time 25

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