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IXYY8N90C3 IGBT Transistor

The IXYY8N90C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYY8N90C3 transistor as follows.

Circuit diagram symbol of the IXYY8N90C3 transistor

IXYY8N90C3 Transistor Specification

Transistor Code IXYY8N90C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO251
Collector Power Dissipation (Maximum) Pc 120W
Collector-Emitter Voltage (Maximum) VCE 900V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.15V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 24
Rise Time 20

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