IXYX140N90C3 IGBT Transistor

The IXYX140N90C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYX140N90C3 transistor as follows.

IXYX140N90C3 Transistor Specification

Transistor Code		IXYX140N90C3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		PLUS247
Collector Power Dissipation (Maximum)	Pc	1630W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.15V
Collector Current (Maximum)	IC	310A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		570
Rise Time		86

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