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IXYX120N120C3 IGBT Transistor

The IXYX120N120C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYX120N120C3 transistor as follows.

Circuit diagram symbol of the IXYX120N120C3 transistor

IXYX120N120C3 Transistor Specification

Transistor Code IXYX120N120C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package PLUS247
Collector Power Dissipation (Maximum) Pc 1500W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.9V
Collector Current (Maximum) IC 220A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 560
Rise Time 70

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