IXYT30N65C3H1HV IGBT Transistor

The IXYT30N65C3H1HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYT30N65C3H1HV transistor as follows.

IXYT30N65C3H1HV Transistor Specification

Transistor Code		IXYT30N65C3H1HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268HV
Collector Power Dissipation (Maximum)	Pc	270W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		173
Rise Time		42

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