IXYT20N120C3D1HV IGBT Transistor

The IXYT20N120C3D1HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYT20N120C3D1HV transistor as follows.

IXYT20N120C3D1HV Transistor Specification

Transistor Code		IXYT20N120C3D1HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268HV
Collector Power Dissipation (Maximum)	Pc	230W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	36A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		120
Rise Time		29

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