IXYQ30N65B3D1 IGBT Transistor

The IXYQ30N65B3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYQ30N65B3D1 transistor as follows.

IXYQ30N65B3D1 Transistor Specification

Transistor Code		IXYQ30N65B3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	270W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	70A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		172
Rise Time		38

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