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IXYP30N65C3 IGBT Transistor

The IXYP30N65C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYP30N65C3 transistor as follows.

Circuit diagram symbol of the IXYP30N65C3 transistor

IXYP30N65C3 Transistor Specification

Transistor Code IXYP30N65C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 270W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 75
Rise Time 42

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