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IXYP20N65C3D1 IGBT Transistor

The IXYP20N65C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYP20N65C3D1 transistor as follows.

Circuit diagram symbol of the IXYP20N65C3D1 transistor

IXYP20N65C3D1 Transistor Specification

Transistor Code IXYP20N65C3D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 200W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 67
Rise Time 34

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