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IXYP15N65C3D1M IGBT Transistor

The IXYP15N65C3D1M is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYP15N65C3D1M transistor as follows.

Circuit diagram symbol of the IXYP15N65C3D1M transistor

IXYP15N65C3D1M Transistor Specification

Transistor Code IXYP15N65C3D1M
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220F
Collector Power Dissipation (Maximum) Pc 57W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 18A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 52
Rise Time 20

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