IXYP10N65C3D1M IGBT Transistor

The IXYP10N65C3D1M is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYP10N65C3D1M transistor as follows.

IXYP10N65C3D1M Transistor Specification

Transistor Code		IXYP10N65C3D1M
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220F
Collector Power Dissipation (Maximum)	Pc	53W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.6V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		42
Rise Time		26

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