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IXYN82N120C3H1 IGBT Transistor

The IXYN82N120C3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN82N120C3H1 transistor as follows.

Circuit diagram symbol of the IXYN82N120C3H1 transistor

IXYN82N120C3H1 Transistor Specification

Transistor Code IXYN82N120C3H1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 105A
Rise Time 93

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