IXYN82N120C3 IGBT Transistor

The IXYN82N120C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN82N120C3 transistor as follows.

IXYN82N120C3 Transistor Specification

Transistor Code		IXYN82N120C3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	600W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	120A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		285
Rise Time		78

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