IXYN75N65C3D1 IGBT Transistor

The IXYN75N65C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN75N65C3D1 transistor as follows.

IXYN75N65C3D1 Transistor Specification

Transistor Code		IXYN75N65C3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	600W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		330
Rise Time		65

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