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IXYN150N60B3 IGBT Transistor

The IXYN150N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN150N60B3 transistor as follows.

Circuit diagram symbol of the IXYN150N60B3 transistor

IXYN150N60B3 Transistor Specification

Transistor Code IXYN150N60B3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 830W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 240A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 410
Rise Time 68

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