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IXYN120N65C3D1 IGBT Transistor

The IXYN120N65C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN120N65C3D1 transistor as follows.

Circuit diagram symbol of the IXYN120N65C3D1 transistor

IXYN120N65C3D1 Transistor Specification

Transistor Code IXYN120N65C3D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 830W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.8V
Collector Current (Maximum) IC 190A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 585
Rise Time 29

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