IXYN120N65B3D1 IGBT Transistor

The IXYN120N65B3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN120N65B3D1 transistor as follows.

IXYN120N65B3D1 Transistor Specification

Transistor Code		IXYN120N65B3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	830W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	250A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		586
Rise Time		28

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