IXYN100N65C3H1 IGBT Transistor

The IXYN100N65C3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN100N65C3H1 transistor as follows.

IXYN100N65C3H1 Transistor Specification

Transistor Code		IXYN100N65C3H1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	600W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	160A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		475
Rise Time		42

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