IXYN100N65A3 IGBT Transistor

The IXYN100N65A3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN100N65A3 transistor as follows.

IXYN100N65A3 Transistor Specification

Transistor Code		IXYN100N65A3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	600W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	170A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		290
Rise Time		39

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